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GT60J322

Part Number	GT60J322
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel IGBT
Published	Jun 19, 2014
Detailed Description	GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Ap...
Datasheet	GT60J322 PDF File

Overview

GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm • • Enhancement-mode Low saturation voltage: VCE (sat) = 1.
25 V (typ.
) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Screw torque DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IECF IECPF PC Tj Tstg  Rating 600 ±25 60 120 60 120 200 150 −55~150 0.
8 Unit V V A A JEDEC W °C °C N m ― ― 2-21F2C JEITA TOSHIBA Weight: 9.
75 g (typ.
) Equivalent Circuit Collector Gat...

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