Product specification
WNM3003
N-Channel, 30V, 4.
0A, Power MOSFET
V(BR)DSS
Rds(on) () 0.
033@ 10V 0.
033@ 10V 0.
043 @ 4.
5V
SOT-23
30V
Descriptions
The WNM3003 is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS
(ON)
D 3
with low gate 1 G 2 S
charge.
This device is suitable for use in DC-DC conversion and power switch applications.
Standard Product WNM3003 is Pb-free.
Configuration (Top View)
Features
z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 WT3 * = Device Code = Month (A~Z) Marking
WT3*
Applicatio...