2SC536
NPN Silicon Epitaxial Planar
Transistor
for switching and AF amplifier applications.
The
transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
1.
Emitter 2.
Collector 3.
Base TO-92 Plastic Package Weight approx.
0.
19g
Absolute Maximum Ratings (Ta = 25℃)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS Value 40 30 5 100 50 400 125 -55 to +125 Unit V V V mA mA mW
O O
C C
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