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C5012

Part Number	C5012
Manufacturer	NEC
Description	2SC5012
Published	May 11, 2016
Detailed Description	DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER...
Datasheet	C5012 PDF File

Overview

DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 9 GHz TYP.
) • Low Noise, High Gain • Low Voltage Operation ORDERING INFORMATION PART NUMBER 2SC5012-T1 2SC5012-T2 QUANTITY 3 Kpcs/Reel.
3 Kpcs/Reel.
PACKING STYLE Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape.
* Please contact with responsible NEC person, if you require evaluation sample.
Unit sample quantity shall be 50 pcs.
(Part No.
: 2SC5012) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage VCBO 20 Collector to Emitter Voltage VCEO 10 Emitter to Base Voltage VEBO 1.
5 Collector Current IC 65 Total Power Dissipation PT 150 Junction Temperature Tj 150 Storage Temperature Tstg –65 to +150 V V V mA mW ˚C ˚C 0.
9 ± 0.
1 0.
3 2.
0 ± 0.
2 (1.
25) 0.
60 0.
65 PACKAGE DIMENSIONS in millimeters +0.
1 –0.
05 2.
1 ± 0.
2 1.
25 ± 0.
1 0.
3 +0.
1 –0.
05 (LEADS 2, 3, 4) 0.
3 23 (1.
3) XYZ +0.
1 –0.
05 0.
4 +0.
1 –0.
05 1 4 0.
3 0 to 0.
1 0.
15 +0.
1 –0.
05 PIN CONNECTIONS 1.
Collector 2.
Emitter 3.
Base 4.
Emitter Caution; Electrostatic Sensitive Device.
Document No.
P10400EJ2V0DS00 (2nd edition) (Previous No.
TD-2412) Date Published July 1995 P Printed in Japan © 1993 2SC5012 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e|2 NF MIN.
50 13 TYP.
100 9.
0 0.
25 15 1.
2 MAX.
1.
0 1.
0 250 0.
8 2.
5 UNIT µA µA GHz pF dB dB TEST CONDITION VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8 V, IC = 20 mA*1 VCE = 8 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz*2 VCE = 8 V, IC = 20 mA,f = 1.
0 GHz VCE = 8 V, IC = 7 mA,f = 1.
0 GHz *1 Pulse Measurement; ...

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