INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.687A IRGBC20S INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 600V VCE(sat) ≤ 2.4V @VGE = 15V, I C = 10A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) fro...
International Rectifier