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IRGBC20F

International Rectifier
Part Number IRGBC20F
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jul 12, 2014
Detailed Description PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Op...
Datasheet PDF File IRGBC20F PDF File

IRGBC20F
IRGBC20F

Overview
PD - 9.
686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency ( 1 to 10kHz) See Fig.
1 for Current vs.
Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 2.
8V @VGE = 15V, IC = 9.
0A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600 16 9.
0 64 64 ±20 5.
0 60 24 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min.
— — — — Typ.
— 0.
50 — 2.
0 (0.
07) Max.
2.
1 — 80 — Units °C/W g (oz) Revision 0 C-51 IRGBC20F Electrical Characteristics @ T J = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp.
Coeff.
of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Gate Threshold Voltage Temp.
Coeff.
of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min.
Typ.
Max.
...


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