Ordering number : ENN7415
2SC5811
NPN Triple Diffused Planar Silicon
Transistor
2SC5811
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
• • • •
Package Dimensions
unit : mm 2174A
[2SC5811]
16.
0
5.
0
High speed.
High breakdown voltage : VCBO=1600V.
High reliability(Adoption of HVP process).
Adoption of MBIT process.
3.
4
5.
6 3.
1
8.
0 22.
0
21.
0 4.
0
2.
8 2.
0
20.
4
0.
7
0.
9
1
2
5.
45
3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ...