SPP3413
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP3413 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES -20V/-3.
4A,RDS(ON)=95mΩ@VGS=-4.
5V -20V/-2.
4A,RDS(ON)=120mΩ@VGS=-2.
5V -20V/-1.
7A,RDS(ON)=145mΩ@VGS=-1.
8V Super high density c...