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SPP3407W

SYNC POWER
Part Number SPP3407W
Manufacturer SYNC POWER
Description P-Channel MOSFET
Published Jul 22, 2014
Detailed Description SPP3407W P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3407W is the P-Channel logic enhancement mode power field ...
Datasheet PDF File SPP3407W PDF File

SPP3407W
SPP3407W

Overview
SPP3407W P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3407W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES ‹ -30V/-4.
0A,RDS(ON)= 70mΩ@VGS=- 10V ‹ -30V/-3.
2A,RDS(ON)= 95mΩ@VGS=-4.
5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOT-23 package design APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter PIN CONFIGURATION(SOT-23) PART MARKING S07WYW S07W : Device Specific code 2011/03/10 Ver.
1 Page 1 SPP3407W P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 ORDERING INFORMATION Part Number SPP3407WS23RG ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP3407WS23RG : Tape Reel ; Pb – Free Package SOT-23 Part Marking S07WYW Symbol G S D Description Gate Source Drain ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -30 ±20 -3.
6 -3.
0 -15 -1.
0 1.
25 0.
8 150 -55/150 375 Unit V V A A A W ℃ ℃ ℃/W 2011/03/10 Ver.
1 Page 2 SPP3407W P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Curre...


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