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SPP3407D

SYNC POWER
Part Number SPP3407D
Manufacturer SYNC POWER
Description P-Channel MOSFET
Published Jul 22, 2014
Detailed Description SPP3407D P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3407D is the P-Channel logic enhancement mode power field...
Datasheet PDF File SPP3407D PDF File

SPP3407D
SPP3407D

Overview
SPP3407D P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3407D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  -30V/-4.
0A,RDS(ON)=70mΩ@VGS=-10V  -30V/-3.
2A,RDS(ON)=95mΩ@VGS=-4.
5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design PIN CONFIGURATION(SOT-23) 2020/1/15 Ver.
2 PART MARKING 07DYW Page 1 SPP3407D P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPP3407DS23RGB SOT-23 ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP3407DS23RGB : Tape Reel ; Pb – Free; Halogen – Free Part Marking 07D ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -30 ±20 -3.
6 -3.
0 -15 -1.
0 1.
25 0.
8 150 -55/150 120 Unit V V A A A W ℃ ℃ ℃/W 2020/1/15 Ver.
2 Page 2 SPP3407D P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Volt...


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