SPP3407W
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP3407W is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES -30V/-4.
0A,RDS(ON)= 70mΩ@VGS=- 10V -30V/-3.
2A,RDS(ON)= 95mΩ@VGS=-4.
5V Super high density cell design for extremely low RDS (ON) Exceptional on-resista...