PMDPB95XNE
26 September 2012
30 V dual N-channel Trench MOSFET
Product data sheet
1.
Product profile
1.
1 General description
Dual N-channel enhancement mode Field-Effect
Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits • Very fast switching • Trench MOSFET technology • Leadless medium power SMD plastic package: 2 × 2 × 0.
6 mm • Exposed drain pad for excellent thermal conduction • ESD protection up to 1.
8 kV 1.
3 Applications • Charging switch for portable devices • DC-to-DC converters • Small brushless DC motor drive • Power management in battery-driven portables • Hard di...