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PMDPB95XNE2

nexperia
Part Number PMDPB95XNE2
Manufacturer nexperia
Description dual N-channel MOSFET
Published Jul 28, 2019
Detailed Description PMDPB95XNE2 30 V, dual N-channel Trench MOSFET 14 June 2016 Product data sheet 1. General description Dual N-channel e...
Datasheet PDF File PMDPB95XNE2 PDF File

PMDPB95XNE2
PMDPB95XNE2

Overview
PMDPB95XNE2 30 V, dual N-channel Trench MOSFET 14 June 2016 Product data sheet 1.
General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Very fast switching • Trench MOSFET technology • Leadless medium power SMD plastic package: 2 × 2 × 0.
65 mm • Exposed drain pad for excellent thermal conduction • EletroStatic Discharge (ESD) protection > 2 kV HBM 3.
Applications • Charging switch for portable devices • DC-to-DC converters • Small brushless DC motor drive • Power management in battery-driven portables • Hard disk and computing power management 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.
5 V; Tamb = 25 °C; t ≤ 5 s Static characteristics (per transistor) RDSon d...


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