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Part Number
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TPCF8004 |
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Manufacturer
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Toshiba Semiconductor |
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Description
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MOSFETs |
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Published
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Aug 27, 2014 |
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Detailed Description
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TPCF8004
MOSFETs Silicon N-Channel MOS (U-MOS)
TPCF8004
1. Applications
• Lithium-Ion Secondary Batteries
2. Features...
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Datasheet
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TPCF8004
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Overview
TPCF8004
MOSFETs Silicon N-Channel MOS (U-MOS)
TPCF8004
1.
Applications
• Lithium-Ion Secondary Batteries
2.
Features
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
1 mA)
3.
Packaging and Internal Circuit
1, 2, 3, 6, 7, 8: Drain 4: Gate 5: Source
VS-8
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single-pulse avalanche energy Avalanch...
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