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TPCF8003

Toshiba Semiconductor
Part Number TPCF8003
Manufacturer Toshiba Semiconductor
Description MOSFET
Published Jul 19, 2010
Detailed Description www.DataSheet4U.com TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPCF8003 Notebook PC...
Datasheet PDF File TPCF8003 PDF File

TPCF8003
TPCF8003

Overview
www.
DataSheet4U.
com TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPCF8003 Notebook PC Applications Portable Equipment Applications • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) =14 mΩ (typ.
) （VGS= 4.
5V） Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.
5 to 1.
2 V (VDS = 10 V, ID = 200 μA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR Tch Tstg Rating 20 20 ±12 7 28 2.
5 0...


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