DatasheetsPDF.com

TPCF8001

Toshiba Semiconductor
Part Number TPCF8001
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 19, 2010
Detailed Description www.DataSheet4U.com TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8001 Notebook...
Datasheet PDF File TPCF8001 PDF File

TPCF8001
TPCF8001

Overview
www.
DataSheet4U.
com TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8001 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.
) High forward transfer admittance: |Yfs| = 8 S (typ.
) Low leakage current: IDSS = 10 μA (max.
) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating 30 30 ±20 ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)