MOSFETs Silicon N-channel MOS (U-MOS)
TK18E10K3
1.
Applications
• Switching Voltage
Regulators
2.
Features
(1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.
) (2) High forward transfer admittance: |Yfs| = 28 S (typ.
) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
3.
Packaging and Internal Circuit
TK18E10K3
1: Gate 2: Drain (heatsink) 3: Source
TO-220
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Drain-gate voltage
(RGS = 20 kΩ)
VDGR
100
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID...