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TK18E10K3

Toshiba Semiconductor
Part Number TK18E10K3
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 10, 2014
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS) TK18E10K3 1. Applications • Switching Voltage Regulators 2. Features (1) Low drai...
Datasheet PDF File TK18E10K3 PDF File

TK18E10K3
TK18E10K3

Overview
MOSFETs Silicon N-channel MOS (U-MOS) TK18E10K3 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.
) (2) High forward transfer admittance: |Yfs| = 28 S (typ.
) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK18E10K3 1: Gate 2: Drain (heatsink) 3: Source TO-220 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 kΩ) VDGR 100 Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID...


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