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TK18E10K3

INCHANGE
Part Number TK18E10K3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 4, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK18E10K3，ITK18E10K3 ·FEATURES ·Low drain-source on-resistance:...
Datasheet PDF File TK18E10K3 PDF File

TK18E10K3
TK18E10K3

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK18E10K3，ITK18E10K3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.
042Ω.
·Enhancement mode: Vth =2.
0 to 4.
0V (VDS = 10 V, ID=1.
0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 54 PD Total Dissipation @TC=25℃ 71 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTER...


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