CEM8809
N-Channel Enhancement Mode Field Effect
Transistor FEATURES
30V, 15.
5A, RDS(ON) = 5.
5mΩ(typ) @VGS = 10V.
RDS(ON) = 7.
5mΩ(typ) @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D 8 D 7 D 6 D 5
PRELIMINARY
SO-8 1
1 S
2 S
3 S
4 G
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C
±16
15.
5 50 2.
5 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parame...