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CEM8809

Chino-Excel Technology
Part Number CEM8809
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Sep 17, 2014
Detailed Description CEM8809 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 15.5A, RDS(ON) = 5.5mΩ(typ) @VGS = 10V. RDS(ON)...
Datasheet PDF File CEM8809 PDF File

CEM8809
CEM8809

Overview
CEM8809 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 15.
5A, RDS(ON) = 5.
5mΩ(typ) @VGS = 10V.
RDS(ON) = 7.
5mΩ(typ) @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D 8 D 7 D 6 D 5 PRELIMINARY SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C ±16 15.
5 50 2.
5 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units C/W 2004.
October 5 - 170 http://www.
cetsemi.
com CEM8809 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 2.
1A VDS = 15V, ID = 16A, VGS = 5V VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω 24 14 100 40 46 15 15 2.
1 1.
3 48 28 200 80 55 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 24V, VGS = 0V VGS = 16V, VDS = 0V VGS = -16V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 15.
5A VGS = 4.
5V, ID = 15A VDS = 5V, ID = 16A 1 5.
5 7.
5 34 8000 800 400 Min 30 1 100 -100 3 6.
6 9.
5 Typ Max Units V ...


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