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CEM8811

Chino-Excel Technology
Part Number CEM8811
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Sep 17, 2014
Detailed Description CEM8811 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V ,12.5A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 13....
Datasheet PDF File CEM8811 PDF File

CEM8811
CEM8811

Overview
CEM8811 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V ,12.
5A, RDS(ON) = 10mΩ @VGS = 10V.
RDS(ON) = 13.
5mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D 8 D 7 D 6 D 5 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C ±20 12.
5 50 2.
5 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units C/W 2005.
March 5 - 174 http://www.
cetsemi.
com CEM8811 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 2.
3A VDS = 15V, ID = 12A, VGS = 5V VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω 18 9 73 15 28.
7 8.
5 8.
7 2.
3 1.
1 35 16 135 30 37.
3 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 12A VGS = 4.
5V, ID = 10A VDS = 15V, ID = 12A 1 8 11 14 3288 582 224 Min 30 1 100 -100 3 10 13.
5 Typ Max Units V µA 5 nA nA V mΩ mΩ S pF...


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