CEM4410B
Dec.
2002
N-Channel Enhancement Mode Field Effect
Transistor
5
FEATURES
30V , 12.
5A , RDS(ON)=9.
5m Ω @VGS=10V.
RDS(ON)=14m Ω @VGS=4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Surface mount Package.
D
8
D
7
D
6
D
5
1
2
3
4
SO-8 1
S
S
S
G
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a
Symbol VDS VGS ID IDM
a
Limit 30
Unit V V A A A W C
Ć20 Ć12.
5 Ć50
2.
3 2.
5 -55 to 150
Drain-Source Diode Forward Current Maximum Power Dissipation
a
IS PD TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACT...