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CEM4410B

Chino-Excel Technology
Part Number CEM4410B
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Sep 17, 2014
Detailed Description CEM4410B Dec. 2002 N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 12.5A , RDS(ON)=9.5m Ω @VGS=10V...
Datasheet PDF File CEM4410B PDF File

CEM4410B
CEM4410B

Overview
CEM4410B Dec.
2002 N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 12.
5A , RDS(ON)=9.
5m Ω @VGS=10V.
RDS(ON)=14m Ω @VGS=4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Surface mount Package.
D 8 D 7 D 6 D 5 1 2 3 4 SO-8 1 S S S G ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Symbol VDS VGS ID IDM a Limit 30 Unit V V A A A W C Ć20 Ć12.
5 Ć50 2.
3 2.
5 -55 to 150 Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACT...


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