Part Number
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SSS5N20 |
Manufacturer
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South Sea Semiconductor |
Description
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Dual N-Channel MOSFET |
Published
|
Sep 18, 2014 |
Detailed Description
|
SSS5N20
Dual N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V) ID (A)
RDS(ON) (mΩ) Max 30 @VGS = 4.5V 20V 4A 45...
|
Datasheet
|
SSS5N20
|
Overview
SSS5N20
Dual N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V) ID (A)
RDS(ON) (mΩ) Max 30 @VGS = 4.
5V 20V 4A 45 @VGS = 2.
5V
D1 (2, 5)
1
TSOP-6
D2 (2, 5)
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount package.
G1(6) S1(1) G2(4) S2(3)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
20 + - 10 4 25 2 1.
25 -55 to 150
Unit
V V A A A W
o
Drain-Source Diode Forward Current Maximum Power Dissipation
a
IS PD TJ, TSTG
Operating Junction and Storage Temperature Range
C
THERMAL CHARACTERISTICS
Therm...
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