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SSS5N20

South Sea Semiconductor
Part Number SSS5N20
Manufacturer South Sea Semiconductor
Description Dual N-Channel MOSFET
Published Sep 18, 2014
Detailed Description SSS5N20 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @VGS = 4.5V 20V 4A 45...
Datasheet PDF File SSS5N20 PDF File

SSS5N20
SSS5N20

Overview
SSS5N20 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @VGS = 4.
5V 20V 4A 45 @VGS = 2.
5V D1 (2, 5) 1 TSOP-6 D2 (2, 5) FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount package.
G1(6) S1(1) G2(4) S2(3) ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 20 + - 10 4 25 2 1.
25 -55 to 150 Unit V V A A A W o Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Operating Junction and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 100 o C/W South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, October 2005 (Rev 2.
1) 1 SSS5N20 Electrical Characteristics (TA = 25 C unless otherwise noted) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage o Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) Condition VGS=0V, ID=250 A Min 20 Typ c Max Unit V VDS=16V, VGS=0V VGS= 10V, VDS=0V A 0.
6 0.
8 28 35 12 802 153 122 18 5 1 100 1.
5 30 m 45 A nA V VDS=VGS ID=250 VGS=4.
5V, ID=4A VGS=2.
5V, ID=3A gFS CISS COSS CRSS tD(ON) tr tD(OFF) tf Qg Qgs Qgd VSD VDS=5V, ID=4A VDS=8V VGS=0V f=1.
0MHz VD=10V, ID=1A, VGEN=4.
5V, RGEN=10 RL=10 VDS=10V, ID=4A, VGS=4.
5V VGS=0V, ID=2A , S PF ns 43.
8 20 10.
5 2 2.
5 0.
82 1.
2 V nC Notes a.
Surface Mounted on FR4 Board, t <10 - sec.
b.
Pulse Test Pulse Width < 300 s, Duty Cycle < - 2%.
c.
Guaranteed by design, not subject to productio...


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