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SSS5N60

Tuofeng
Part Number SSS5N60
Manufacturer Tuofeng
Description N-CHANNEL MOSFET
Published Jan 26, 2014
Detailed Description Shenzhen Tuofeng Semiconductor Technology Co., Ltd N60 SSS5N60 4 Amps，600Volts N-CHANNEL MOSFET ■ DESCRIPTION The SSS5...
Datasheet PDF File SSS5N60 PDF File

SSS5N60
SSS5N60

Overview
Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd N60 SSS5N60 4 Amps，600Volts N-CHANNEL MOSFET ■ DESCRIPTION The SSS5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in power supplies .
PWM motor controls, high efficient DC to DC converters and bridge circuits.
■ ● ● ● ● ● ● FEATURES RDS(ON)=2.
5Ω@VGS=10V Ultra Low gate charge(tupical 15.
0nC) Low reverse transfer capacitance(CRSS=typica8.
0pF) Fast switching capability Avalanche energy specified Improved dv/dt capability,high ruggedness ■ SYMBOL ■ ORDERING INF ORMATION Order Number Normal 5N60-TA3-T 5N60-TF3-T 5N60-TM3-T 5N60-TN3-R 5N60-TN3-T Lead Free Plating 5N60L-TA3-T 5N60L-TF3-T 5N60L-TM3-T 5N60L-TN3-R 5N60L-TN3-T TO-220 TO-220F TO-251 TO-252 TO-252 Package 1 G G G G G Pin Assignment 2 D D D D D 3 S S S S S Tube Tube Tube Tape Reel Tube Packing Note:Pin Assignment: G:Gate D:Drain S:Source 5N60L-TA3-T （1）Packing Type （2）Package Type （3）Lead Plating (1)T:Tube,R:Tape Reel (2)TA3:TO220,TF3:TO-220F,TM3:TO-251,TN3:TO-252 (3)L:Lead Free Plating Blank：Pb/Sn ■ ABSOLUTE MAXIMUM RATINGS(Tc=25℃,unless PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current(Note 2) Drain Currenet Continuous Drain Current Pulsed(Note 2) Tc=25℃ Tc=100℃ otherwise specified) PATINGS 600 ±30 4.
4 4.
0 2.
5 UNIT V V A A A A SYMBOL VDSS VGSS IAP ID IDP 16 1 Free Datasheet http://www.
datasheet4u.
com/ Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd SSS5N60 Avalanche Energy Peak Diode Recovery dv/dt(Note 4) Total Power Dissipation Tc=25℃ Derate above 25℃ Junction Temperature Storage Temperature Repetitive(Note 2) Single Pulse(Note 3) EAR EAS dv/dt PD TJ TSTG 260 10.
6 4.
5 75 0.
59 +150 -55~+150 mJ mJ v/ns W w/℃ ℃ ℃ Note:1.
Absolute maximum ratings are those values beyond which the device could be permanently d...


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