isc Silicon
PNP Power
Transistor
2SA1964
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC5248 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-1.
5
A
2 W
20
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