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Part Number
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TK10A60E |
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Manufacturer
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Toshiba Semiconductor |
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Title
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MOSFETs |
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Description
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TK10A60E
MOSFETs Silicon N-Channel MOS (π-MOS)
TK10A60E
1. Applications
• Switching Voltage Regula...
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Features
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(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max)...
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Published
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Sep 19, 2014 |
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Datasheet
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TK10A60E PDF File
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Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain 3...
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