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TK10A60D

Toshiba
Part Number TK10A60D
Manufacturer Toshiba
Description N-Channel MOSFET
Published Jan 12, 2010
Detailed Description TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications ...
Datasheet PDF File TK10A60D PDF File

TK10A60D
TK10A60D

Overview
TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • • • • Low drain-source ON-resistance: RDS (ON) = 0.
62 Ω (typ.
) High forward transfer admittance: |Yfs| = 6.
0 S (typ.
) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 10 40 45 363 10 4.
5 150 -55 to 150 A Unit V V V 1: Gate 2: Drain 3: Source Pulse (t = 1 ms) (Note 1) JEDEC W mJ A mJ °C °C ― SC-67 2-10U1B Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) JEITA TOSHIBA Weight : 1.
7 g (typ.
) www.
DataSheet4U.
com Channel temperature Storage temperature range Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.
78 62.
5 Unit °C/W °C/W 1 2 Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.
36 mH, RG = 25 Ω, IAR = 10 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostat...


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