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TK10A60D5

Toshiba
Part Number TK10A60D5
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Dec 30, 2023
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK10A60D5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast rev...
Datasheet PDF File TK10A60D5 PDF File

TK10A60D5
TK10A60D5

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK10A60D5 1.
Applications • Switching Voltage Regulators 2.
Features (1) Fast reverse recovery time: trrf = 50 ns (typ.
), trr = 90 ns (typ.
) (2) Low drain-source on-resistance: RDS(ON) = 0.
8 Ω (typ.
) (3) High forward transfer admittance: |Yfs| = 6.
0 S (typ.
) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (5) Enhancement mode: Vth = 2.
5 to 4.
5 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK10A60D5 TO-220SIS 1: Gate 2: Drain 3: Source ©2017 Toshiba Electronic Devices & Storage Corporation 1 2017-09-05 Rev.
3.
0 TK10A60D5 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 10 A Drain current (pulsed) (t = 1 ms) (Note 1) IDP 40 Power dissipation (Tc = 25) PD 45 W Single-pulse avalanche energy (Note 2) EAS 364 mJ Avalanche current IAR 10 A ...


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