Green Product
STS8216
Ver 1.
0
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
20V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
ID
6A
R DS(ON) (m Ω) Max
20 @ VGS=4.
0V 27 @ VGS=2.
5V
SOT 26 Top View
D1
D2
S1 D1/D2 S2
1 2 3
6 5 4
G1 D1/D2 G2
G1
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit 20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C 6 4.
8 24
a
Units V V A A A W W °C
Maximum Power Dissipation
1.
25 0.
...