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STS8213

SamHop
Part Number STS8213
Manufacturer SamHop
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published Oct 15, 2014
Detailed Description Green Product STS8213 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transisto...
Datasheet PDF File STS8213 PDF File

STS8213
STS8213

Overview
Green Product STS8213 Ver 1.
0 S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 16.
0 @ VGS=4.
0V 20V 7A 16.
5 @ VGS=3.
7V 18.
0 @ VGS=3.
1V 22.
0 @ VGS=2.
5V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 7 5.
6 27 a Units V V A A A W W °C Maximum Power Dissipation 1.
25 0.
8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice.
Jan,02,2013 1 www.
samhop.
com.
tw STS8213 Ver 1.
0 ELECTRICAL CHARACT...


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