20V N-Cha
SI2302
VDS= 20V RDS(ON), Vgs@ 4. 5V, Ids@ RDS(ON), Vgs@ 2. 5V, Ids@ 2. 0A
3. 6A
85m Ω 115mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions
D
G
S
SOT-23
REF. A B C D E F
Millimeter Min. Max. 2. 70 3. 10 2. 40 2. 80 1. 40 1. 60 0. 35 0. 50 0 0. 10 0. 45 0. 55
REF. G H K J L M
Millimeter Min. Max. 1. 90 REF. 1. 00 1. 30 0. 10 0. 20 0. 40 0. 85 1. 15 0e 10e
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1)
Symbol
Limit
Unit
VDS VGS ID IDM
2)
20 ±8 2. 3 8 1. 25 0. 8 -55 to 150 100
o
V
A
TA = 25o TA =...