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SI2300

HOTTECH
Part Number SI2300
Manufacturer HOTTECH
Description Plastic-Encapsulate Mosfets
Published Nov 27, 2018
Detailed Description Plastic-Encapsulate Mosfets FEATURES Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resis...
Datasheet PDF File SI2300 PDF File

SI2300
SI2300

Overview
Plastic-Encapsulate Mosfets FEATURES Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Ratings Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V Drain Current (Continuous) Drain Current (Pulsed) 1 Total Power Dissipation @TA=25 oC ID 6 A IDM 18 A PD 1.
25 W Maximum Diode Forward Current IS 1.
6 A Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)2 Tj, Tstg -55 to +150 °C RθJA 140 °C/W 1: Repetitive Rating: Pulse width limited by the maximum junction temperation.
2: 1-in2 2oz Cu PCB board Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic • Off Characteristics Test Conditions BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current •On Characteristics3 ...


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