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SI2300

HAOCHANG
Part Number SI2300
Manufacturer HAOCHANG
Description N-Channel MOSFET
Published Nov 27, 2018
Detailed Description SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD. SOT-23-3 Plastic-Encapsulate MOSFETS SI2300 N-Channel Enhancement MOSFET Feat...
Datasheet PDF File SI2300 PDF File

SI2300
SI2300

Overview
SHENZHEN HAOCHANG SEMICONDUCTOR CO.
,LTD.
SOT-23-3 Plastic-Encapsulate MOSFETS SI2300 N-Channel Enhancement MOSFET Features VDS=20V,RDS(ON)=40m @VGS=4.
5V,ID=5.
0A VDS=20V,RDS(ON)=60m @VGS=2.
5V,ID=4.
0A VDS=20V ,RDS(ON)=75m @VGS=1.
8V,ID=1.
0A +0.
22.
8 -0.
1 SOT-23-3 2.
9 +0.
2 -0.
1 0.
4 +0.
1 -0.
1 3 12 0.
95 +0.
1 -0.
1 1.
9 +0.
1 -0.
2 +0.
21.
1 -0.
1 +0.
21.
6 -0.
1 0.
55 0.
4 Unit: mm 0.
15 +0.
02 -0.
02 1.
Gate 2.
Source 3.
Drain 0-0.
1 +0.
10.
68 -0.
1 Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tj=125 ℃ Pulsed Drain Current Power Dissipation Thermal Resistance.
Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 20 ±10 3.
8 15 1.
25 100 150 -55 to 150 Unit V A W ℃/W ℃ ©2008 1 of 2 www.
szhaochang.
cn SMD Type SI2300 MOSFIECTYJSI Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Lea...


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