STB/P60L60
S a mHop Microelectronics C orp.
Ver 1.
0
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
60V
FEATURES Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
ID
36A
R DS(ON) (m Ω) Max
27 @ VGS=10V 42 @ VGS=4.
5V
D
D
G
S
G D S
G
S TP S E R IE S TO-220
S TB S E R IE S TO-263(DD-P AK)
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy c Maximum Power Dissipation
a b a
Limit 60 ±20 T C =25 °C T C =70 °C 36 29 106 113 T...