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STP60L60

SamHop
Part Number STP60L60
Manufacturer SamHop
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published Oct 15, 2014
Detailed Description STB/P60L60 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRO...
Datasheet PDF File STP60L60 PDF File

STP60L60
STP60L60

Overview
STB/P60L60 S a mHop Microelectronics C orp.
Ver 1.
0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V FEATURES Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
ID 36A R DS(ON) (m Ω) Max 27 @ VGS=10V 42 @ VGS=4.
5V D D G S G D S G S TP S E R IE S TO-220 S TB S E R IE S TO-263(DD-P AK) S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy c Maximum Power Dissipation a b a Limit 60 ±20 T C =25 °C T C =70 °C 36 29 106 113 TC=25°C TC=70°C 70 45 -55 to 150 Units V V A A A mJ W W °C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 1.
75 62.
5 °C/W °C/W Details are subject to change without notice.
Sep,17,2008 1 www.
samhop.
com.
tw Downloaded from Elcodis.
com electronic components distributor STB/P60L60 Ver 1.
0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=48V , VGS=0V Min 60 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS DYNAMIC CISS COSS CRSS Drain-Source On-State Resistance Forward Transconductance CHARACTERISTICS b Input Capacitance Output Capacitance Reverse Transfer Capacitance b VGS= ±20V , VDS=0V 1 ±100 1 2 21 32 26 3 27 42 A nA V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC VDS=VGS , ID=250uA VGS=10V , ID=25A VGS=4.
5V , ID=20A VDS=10V , ID=25A VDS=15V,VGS=0V f=1.
0MHz 1830 182 120 45 70 125 38 28 4.
5 9 10 0.
84 1.
3 SWITCHING CHARACTERISTICS tD(ON) Turn-On DelayTime tr Rise Time tD(OFF) Turn-Off DelayTime tf Fall Time Qg Qgs Qgd Total Gate Char...


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