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STP60L60F

SamHop
Part Number STP60L60F
Manufacturer SamHop
Description N-Channel Enhancement Mode Field Effect Transistor
Published Oct 15, 2014
Detailed Description Gr Pr STP60L60F Ver 1.0 SamHop Microelectronics Corp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMM...
Datasheet PDF File STP60L60F PDF File

STP60L60F
STP60L60F


Overview
Gr Pr STP60L60F Ver 1.
0 SamHop Microelectronics Corp.
N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 32A R DS(ON) (m Ω) Typ 15 @ VGS=10V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
TO-220F Package.
D G D S G STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy d b a Limit 60 ±20 T C =25 °C T C =70 °C 32 26.
8 95 144 a Units V V A A A mJ W W °C Maximum Power Dissipation TC=25°C TC=70°C 30 21 -55 to 175 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 5 65 °C/W °C/W Details are subject to change without notice.
Oct,13,2011 1 www.
samhop.
com.
tw STP60L60F Ver 1.
0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=48V , VGS=0V Min 60 Typ Max Units V OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current 1 ±100 uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=16A VDS=20V , ID=16A 2 2.
8 15 25 2300 142 108 4 19 V m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=25V,VGS=0V f=1.
0MHz VDD=30V ID=1A VGS=10V RGEN= 6 ohm VDS=30V,ID=25A,VGS=10V VDS=30V,ID=25A, VGS=10V 63 71 162 42 28 5 9.
6 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=...


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