SVD2N70M/F/T_Datasheet
2A, 700V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD2N70M/F/T is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary S-Rin
TM
structure VDMOS technology.
The improved planar stripe
cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
∗ ∗ ∗ ∗ ∗ 2A,700V, RDS(on) (typ)=5.
5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
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