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SVD2N70M

Silan Microelectronics
Part Number SVD2N70M
Manufacturer Silan Microelectronics
Description 700V N-CHANNEL MOSFET
Published Oct 20, 2014
Detailed Description SVD2N70M/F/T_Datasheet 2A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N70M/F/T is an N-channel enhancement mode power...
Datasheet PDF File SVD2N70M PDF File

SVD2N70M
SVD2N70M

Overview
SVD2N70M/F/T_Datasheet 2A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N70M/F/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES ∗ ∗ ∗ ∗ ∗ 2A,700V, RDS(on) (typ)=5.
5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
SVD2N70M SVD2N70F SVD2N70T Package TO-251-3L TO-220F-3L TO-220-3L Marking SVD2N70M SVD2N70F SVD2N70T Material Pb free Pb free Pb free Packing Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http://www.
silan.
com.
cn REV:1.
1 2011.
03.
03 Page 1 of 9 SVD2N70M/F/T_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg 34 0.
27 Rating SVD2N70M SVD2N70F 700 ±30 2.
0 8.
0 23 0.
18 89 -55～+150 -55～+150 44 0.
35 SVD2N70T Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating SVD2N70M 3.
70 110 SVD2N70F 5.
56 120 SVD2N70T 2.
86 62.
5 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on ...


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