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SVD2N70T


Part Number SVD2N70T
Manufacturer Silan Microelectronics
Title 700V N-CHANNEL MOSFET
Description SVD2N70M/F/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMO...
Features ∗ ∗ ∗ ∗ ∗ 2A,700V, RDS(on) (typ)=5.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD2N70M SVD2N70F SVD2N70T Package TO-251-3L TO-220F-3L TO-220-3L Marking SVD2N70M SVD2N70F SVD2N70T Material Pb free Pb free Pb free Packing T...

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SVD2N70F : SVD2N70M/F/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ ∗ ∗ ∗ ∗ 2A,700V, RDS(on) (typ)=5.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD2N70M SVD2N70F SVD2N7.

SVD2N70M : SVD2N70M/F/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ ∗ ∗ ∗ ∗ 2A,700V, RDS(on) (typ)=5.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD2N70M SVD2N70F SVD2N7.




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