isc Silicon
PNP Darlington Power
Transistors
BDT62/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C
·Complement to Type BDT63/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDT62
-60
VCBO
Collector-Base Voltage
BDT62A BDT62B
-80 -100
BDT62C
-120
BDT62
-60
VCEO
Collector-Emitter Voltage
BDT62A BDT62B
-80 -100...