TPCS8201
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOS II)
TPCS8201
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
Unit: mm
l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.
) l High forward transfer admittance: |Yfs| = 13 S (typ.
) l Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) l Enhancement-mode: Vth = 0.
5~1.
2 V (VDS = 10 V, ID = 200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20kΩ) Gate-source voltage
Drain curren
DC Pulse
(Note 1) (Note 1)
Single-device
Drain power dissipation
operation (Note ...