isc Silicon
PNP Darlington Power
Transistor
DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65F/AF/BF/CF ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT64F
-60
VCER
Collector-Emitter Voltage
BDT64AF
-80
V
BDT64BF -100
BDT64CF -120
BDT64F
-60
VCEO
Collector-Emitter Voltage
BDT64AF
-80
V
BDT64BF -100
BDT64CF -120
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
ICM
Collector Current-Peak
-20...