DatasheetsPDF.com

BDT64A

Inchange Semiconductor
Part Number BDT64A
Manufacturer Inchange Semiconductor
Description Silicon PNP Darlington Power Transistor
Published Dec 6, 2012
Detailed Description isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min...
Datasheet PDF File BDT64A PDF File

BDT64A
BDT64A

Overview
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT64 -60 VCER Collector-Emitter Voltage BDT64A BDT64B -80 -100 BDT64C -120 BDT64 -60 VCEO Collector-Emitter Voltage BDT64A BDT64B -80 -100 BDT64C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -12 ICM Collector Current-Peak -20 IB Base Current-Continuous -0.
5 PC Collector Power Dissipation @ TC=25℃ 125 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1 ℃/W BDT64/A/B/C isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDT64/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT BDT64 -60 V(BR)CEO Collector-Emitter Breakdown Voltage BDT64A BDT64B IC= -30mA ;IB=0 -80 -100 V BDT64C -120 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA -2.
0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA -3.
0 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -4V -2.
5 V VECF-1 C-E Diode Forward Voltage IF= -5A -2.
0 V VECF-2 C-E Diode Forward Voltage IF= -12A -2.
0 V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 1/2VCEOmax; IB= 0 VCB= VCBOmax;IE= 0 VCB= 1/2VCBOmax;IE= 0;TC= 150℃ VEB= -5V; IC=0 -0.
2 mA -0.
4 -2.
0 mA -5 mA hFE-1 DC Current Gain IC= -1A ; VCE= -4V 1500 hFE-2 DC Current Gain IC= -5A ; VCE= -4V 1000 hFE-3 DC Current Gain IC= -12A ; VCE=...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)