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BDT64BF

INCHANGE
Part Number BDT64BF
Manufacturer INCHANGE
Description Silicon PNP Darlington Power Transistor
Published Dec 3, 2014
Detailed Description isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Mi...
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BDT64BF
BDT64BF

Overview
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65F/AF/BF/CF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT64F -60 VCER Collector-Emitter Voltage BDT64AF -80 V BDT64BF -100 BDT64CF -120 BDT64F -60 VCEO Collector-Emitter Voltage BDT64AF -80 V BDT64BF -100 BDT64CF -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
5 A 39 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 5.
7 ℃/W BDT64F/AF/BF/CF isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDT64F/AF/BF/CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT BDT64F -60 V(BR)CEO Collector-Emitter Breakdown Voltage BDT64AF IC= -30mA ;IB=0 BDT64BF -80 -100 V BDT64CF -120 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA -2.
0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA -3.
0 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -4V -2.
5 V VECF C-E Diode Forward Voltage IF= -5A -2.
0 V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 1/2VCEOmax; IB= 0 VCB= VCBOmax;IE= 0 VCB= 1/2VCBOmax;IE= 0;TC= 150℃ VEB= -5V; IC=0 -1 mA -0.
4 -2 mA -5 mA hFE-1 DC Current Gain IC= -1A ; VCE= -4V 4000 hFE-2 DC Current Gain IC= -5A ; VCE= -4V 1000 hFE-3 DC Current Gain IC= -12A ; VCE= -4V 800 COB Output Capa...


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