200V N-Channel MOSFET
FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET FQD10N20C / FQU10N20C N-Channel QFET® MOSFET 200 V, 7.8 A, 360 mΩ Features • 7.8 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 40.5 pF) • 100% Avalanche Tested November 2013 Description This N-Channel enhancement mode power MOSFET is produced using F...
Fairchild Semiconductor