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FQU10N20

INCHANGE
Part Number FQU10N20
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Low On-Resistance : RDS(on) = 0.36Ω...
Datasheet PDF File FQU10N20 PDF File

FQU10N20
FQU10N20

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Low On-Resistance : RDS(on) = 0.
36Ω(Max) ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power factor correction ·Switched mode power supplies ·Uninterruptible Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Plused PD Total Dissipation @TC=25℃ Tj Max.
Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case FQU10N20 VALUE 200 ±30 7.
6 30 55 150 -55~150 UNIT V V A A W ℃ ℃ MAX 2.
27 UNIT ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor FQU10N20 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ...


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