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FQU10N20C

Fairchild Semiconductor
Part Number FQU10N20C
Manufacturer Fairchild Semiconductor
Description 200V N-Channel MOSFET
Published Dec 27, 2014
Detailed Description FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET FQD10N20C / FQU10N20C N-Channel QFET® MOSFET 200 V, 7.8 A, 360 mΩ Featur...
Datasheet PDF File FQU10N20C PDF File

FQU10N20C
FQU10N20C

Overview
FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET FQD10N20C / FQU10N20C N-Channel QFET® MOSFET 200 V, 7.
8 A, 360 mΩ Features • 7.
8 A, 200 V, RDS(on) = 360 mΩ (Max.
) @ VGS = 10 V, ID = 3.
9 A • Low Gate Charge (Typ.
20 nC) • Low Crss (Typ.
40.
5 pF) • 100% Avalanche Tested November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol Parameter FQD10N20CTM / FQU10N20CTU VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 200 7.
8 5.
0 31.
2 ± 30 210 7.
8 5.
0 5.
5 PD Power Dissipation (TC = 25°C) - Derate above 25°C 50 0.
4 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds -55 to +150 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQD10N20CTM / FQU10N20CTU 2.
5 110 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Unit °C/W ©2003 Fairchild Semiconductor Corporation 1 FQD10N20C / FQU10N20C Rev.
C2 www.
fairchildsemi.
com FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET Package Marking and Ordering Information Device Marking FQD10N20C FQU10N20C Device FQD10N20CTM FQU10N20CTU Package D-PAK I-PAK Reel Size 330 mm Tube Tape Width 16 mm...


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